Part Details for IXXX110N65B4H1 by IXYS Corporation
Overview of IXXX110N65B4H1 by IXYS Corporation
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXXX110N65B4H1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXXX110N65B4H1-ND
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DigiKey | IGBT 650V 240A 880W PLUS247 Min Qty: 1 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$12.6679 / $18.3500 | Buy Now |
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DISTI #
747-IXXX110N65B4H1
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Mouser Electronics | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT RoHS: Compliant | 1 |
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$18.3500 / $18.3600 | Buy Now |
|
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Future Electronics | IXXX Series 650 Vce 240 A 38 ns t(on) XPT™ GenX4™ w/Sonic Diode - ISOPLUS-247 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$11.6000 / $11.8700 | Buy Now |
|
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Quest Components | 3 |
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$18.9840 / $20.3400 | Buy Now | |
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DISTI #
IXXX110N65B4H1
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TTI | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$11.8300 | Buy Now |
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DISTI #
IXXX110N65B4H1
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TME | Transistor: IGBT, GenX4™, 650V, 110A, 880W, PLUS247™ Min Qty: 1 | 0 |
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$11.1000 / $15.4700 | RFQ |
Part Details for IXXX110N65B4H1
IXXX110N65B4H1 CAD Models
IXXX110N65B4H1 Part Data Attributes
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IXXX110N65B4H1
IXYS Corporation
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Datasheet
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Compare Parts:
IXXX110N65B4H1
IXYS Corporation
Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, N-Channel,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 250 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 880 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 250 ns | |
| Turn-on Time-Nom (ton) | 65 ns | |
| VCEsat-Max | 2.1 V |