Datasheets
IXXX200N65B4 by:

Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel,

Part Details for IXXX200N65B4 by IXYS Corporation

Overview of IXXX200N65B4 by IXYS Corporation

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Price & Stock for IXXX200N65B4

Part # Distributor Description Stock Price Buy
DISTI # IXXX200N65B4-ND
DigiKey IGBT PT 650V 370A PLUS247-3 Min Qty: 1 Lead time: 46 Weeks Container: Tube Temporarily Out of Stock
  • 1 $26.4100
  • 30 $21.8967
  • 120 $20.5282
  • 510 $17.5174
$17.5174 / $26.4100 Buy Now
DISTI # 747-IXXX200N65B4
Mouser Electronics IGBT Transistors 650V/370A Trench IGBT GenX4 XPT RoHS: Compliant 219
  • 1 $26.0900
  • 10 $23.4700
  • 30 $20.9700
  • 60 $19.7800
  • 120 $19.5000
  • 270 $19.4900
$19.4900 / $26.0900 Buy Now
Future Electronics IGBT PT 650V 370A 1150W Through Hole PLUS247™-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $18.5300
  • 60 $18.4200
  • 90 $18.3600
  • 120 $18.3100
  • 150 $18.1700
$18.1700 / $18.5300 Buy Now
DISTI # IXXX200N65B4
TTI IGBT Transistors 650V/370A Trench IGBT GenX4 XPT Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $18.5300
$18.5300 Buy Now
DISTI # IXXX200N65B4
TME Transistor: IGBT, GenX4™, 650V, 200A, 1.63kW, PLUS247™ Min Qty: 1 0
  • 1 $24.8900
  • 3 $22.4300
  • 10 $19.7600
  • 30 $17.8400
$17.8400 / $24.8900 RFQ

Part Details for IXXX200N65B4

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IXXX200N65B4 Part Data Attributes

IXXX200N65B4 IXYS Corporation
Buy Now Datasheet
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IXXX200N65B4 IXYS Corporation Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Collector Current-Max (IC) 370 A
Collector-Emitter Voltage-Max 650 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e3
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1150 W
Surface Mount NO
Terminal Finish Matte Tin (Sn)

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