Datasheets
IXYN100N120C3H1 by:

Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4

Part Details for IXYN100N120C3H1 by IXYS Corporation

Overview of IXYN100N120C3H1 by IXYS Corporation

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Price & Stock for IXYN100N120C3H1

Part # Distributor Description Stock Price Buy
DISTI # IXYN100N120C3H1-ND
DigiKey IGBT MOD 1200V 134A 690W SOT227B Min Qty: 1 Lead time: 57 Weeks Container: Tube Temporarily Out of Stock
  • 1 $53.8900
  • 10 $48.0190
  • 100 $42.1482
$42.1482 / $53.8900 Buy Now
DISTI # 747-IXYN100N120C3H1
Mouser Electronics IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT RoHS: Compliant 0
  • 1 $53.9000
  • 10 $48.1500
  • 20 $48.0200
$48.0200 / $53.9000 Order Now
Future Electronics GenX3™ XPT™ IGBT 1200 V 134 A Chassis Mount High-Speed IGBT - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $40.3200
  • 20 $40.0500
  • 30 $39.8900
  • 50 $39.6900
  • 100 $39.2700
$39.2700 / $40.3200 Buy Now
Future Electronics GenX3™ XPT™ IGBT 1200 V 134 A Chassis Mount High-Speed IGBT - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $40.3200
  • 20 $40.0500
  • 30 $39.8900
  • 50 $39.6900
  • 100 $39.2700
$39.2700 / $40.3200 Buy Now
DISTI # IXYN100N120C3H1
TTI IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $49.6800
$49.6800 Buy Now
DISTI # IXYN100N120C3H1
TME Module: IGBT, single transistor, Urmax: 1.2kV, Ic: 62A, SOT227B Min Qty: 1 0
  • 1 $65.1900
  • 3 $58.6600
  • 10 $51.8100
$51.8100 / $65.1900 RFQ
Chip1Cloud IGBT MOD 1200V 134A 690W SOT227B 499
RFQ
DISTI # 2674801
element14 Asia-Pacific IGBT, N-CH, 1.2KV, 134A, SOT-227B RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $55.9590
  • 5 $51.4235
  • 10 $46.8881
  • 50 $45.3319
  • 100 $44.9910
$44.9910 / $55.9590 Buy Now
DISTI # 2674801
Farnell IGBT, N-CH, 1.2KV, 134A, SOT-227B RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 0
  • 1 $52.1080
  • 5 $49.2635
  • 10 $46.4190
  • 50 $40.7550
$40.7550 / $52.1080 Buy Now
New Advantage Corporation IGBT MOD.DIODE SINGLE 62A 1200V SOT-227B GENX3 RoHS: Compliant Min Qty: 1 Package Multiple: 100 1004
  • 100 $71.3700
  • 1,004 $66.6100
$66.6100 / $71.3700 Buy Now

Part Details for IXYN100N120C3H1

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IXYN100N120C3H1 Part Data Attributes:

IXYN100N120C3H1 IXYS Corporation
Buy Now Datasheet
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IXYN100N120C3H1 IXYS Corporation Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection ISOLATED
Collector Current-Max (IC) 134 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 690 W
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 265 ns
Turn-on Time-Nom (ton) 122 ns

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