Datasheets
JAN2N6760 by:

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

Part Details for JAN2N6760 by Unitrode Corporation

Overview of JAN2N6760 by Unitrode Corporation

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Part Details for JAN2N6760

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JAN2N6760 Part Data Attributes

JAN2N6760 Unitrode Corporation
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JAN2N6760 Unitrode Corporation Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
Part Life Cycle Code Obsolete
Ihs Manufacturer UNITRODE CORP
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 80 pF
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 65 ns

Alternate Parts for JAN2N6760

This table gives cross-reference parts and alternative options found for JAN2N6760. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6760, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6760TXV Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation JAN2N6760 vs 2N6760TXV
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JAN2N6760 vs JAN2N6760
2N6760 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JAN2N6760 vs 2N6760
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation JAN2N6760 vs 2N6760
UFN330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JAN2N6760 vs UFN330
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JAN2N6760 vs JANTX2N6760
IRF331 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JAN2N6760 vs IRF331
JANTX2N6760 5.5A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation JAN2N6760 vs JANTX2N6760
JANTXV2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation JAN2N6760 vs JANTXV2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors JAN2N6760 vs 2N6760R1
Part Number Description Manufacturer Compare
IRF330-JQR-BR1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JAN2N6760 vs IRF330-JQR-BR1
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JAN2N6760 vs IRF332
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation JAN2N6760 vs 2N6760
IRF322 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.8A I(D),TO-204AA Intersil Corporation JAN2N6760 vs IRF322
JANTXV2N6760 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, FORMERLY TO-3, 2 PIN Intersil Corporation JAN2N6760 vs JANTXV2N6760
IRF320 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JAN2N6760 vs IRF320
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JAN2N6760 vs JAN2N6760
2N6760TXV 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC JAN2N6760 vs 2N6760TXV
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation JAN2N6760 vs JAN2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors JAN2N6760 vs 2N6760R1

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