Datasheets
JANS2N6770 by: Microsemi Corporation

Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

Part Details for JANS2N6770 by Microsemi Corporation

Overview of JANS2N6770 by Microsemi Corporation

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Part Details for JANS2N6770

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JANS2N6770 Part Data Attributes

JANS2N6770 Microsemi Corporation
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JANS2N6770 Microsemi Corporation Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for JANS2N6770

This table gives cross-reference parts and alternative options found for JANS2N6770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N6770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF451 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Littelfuse Inc JANS2N6770 vs IRF451
2N6770E3 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation JANS2N6770 vs 2N6770E3
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANS2N6770 vs IRF451
IRF450 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANS2N6770 vs IRF450
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics JANS2N6770 vs IRF451
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANS2N6770 vs JANTX2N6770
JANTXV2N6770 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation JANS2N6770 vs JANTXV2N6770
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG JANS2N6770 vs JANTX2N6770
2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANS2N6770 vs 2N6770
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANS2N6770 vs JANTX2N6770
Part Number Description Manufacturer Compare
IRF451 Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANS2N6770 vs IRF451
IRF451 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANS2N6770 vs IRF451
2N6770E3 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation JANS2N6770 vs 2N6770E3
IRF450 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANS2N6770 vs IRF450
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANS2N6770 vs JANTX2N6770
JAN2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Unitrode Corporation JANS2N6770 vs JAN2N6770
IRF451 Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JANS2N6770 vs IRF451
JAN2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANS2N6770 vs JAN2N6770
JANTX2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JANS2N6770 vs JANTX2N6770
JANTXV2N6770 Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANS2N6770 vs JANTXV2N6770

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