Part Details for JANS2N6770 by Microsemi Corporation
Overview of JANS2N6770 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANS2N6770
JANS2N6770 CAD Models
JANS2N6770 Part Data Attributes
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JANS2N6770
Microsemi Corporation
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Datasheet
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JANS2N6770
Microsemi Corporation
Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | FLANGE MOUNT, O-MBFM-P2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-3 | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for JANS2N6770
This table gives cross-reference parts and alternative options found for JANS2N6770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N6770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF451 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Littelfuse Inc | JANS2N6770 vs IRF451 |
2N6770E3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 | Microsemi Corporation | JANS2N6770 vs 2N6770E3 |
IRF451 | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | JANS2N6770 vs IRF451 |
IRF450 | 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANS2N6770 vs IRF450 |
IRF451 | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | JANS2N6770 vs IRF451 |
JANTX2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | JANS2N6770 vs JANTX2N6770 |
JANTXV2N6770 | 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | Intersil Corporation | JANS2N6770 vs JANTXV2N6770 |
JANTX2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | Infineon Technologies AG | JANS2N6770 vs JANTX2N6770 |
2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | JANS2N6770 vs 2N6770 |
JANTX2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANS2N6770 vs JANTX2N6770 |