Part Details for JANS2N6851 by Microsemi Corporation
Overview of JANS2N6851 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANS2N6851
JANS2N6851 CAD Models
JANS2N6851 Part Data Attributes
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JANS2N6851
Microsemi Corporation
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Datasheet
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JANS2N6851
Microsemi Corporation
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | P-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for JANS2N6851
This table gives cross-reference parts and alternative options found for JANS2N6851. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N6851, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | JANS2N6851 vs 2N6851 |
2N6851TXV | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Fairchild Semiconductor Corporation | JANS2N6851 vs 2N6851TXV |
IRFF9230-JQR-B | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANS2N6851 vs IRFF9230-JQR-B |
JANTXV2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | JANS2N6851 vs JANTXV2N6851 |
JANTX2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | JANS2N6851 vs JANTX2N6851 |
2N6851TX | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | JANS2N6851 vs 2N6851TX |
JAN2N6851 | Power Field-Effect Transistor | Harris Semiconductor | JANS2N6851 vs JAN2N6851 |
JANTXV2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | JANS2N6851 vs JANTXV2N6851 |
JANS2N6851 | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | JANS2N6851 vs JANS2N6851 |
IRFF9230-JQR-B | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANS2N6851 vs IRFF9230-JQR-B |