Datasheets
JANS2N7236 by:

Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

Part Details for JANS2N7236 by International Rectifier

Overview of JANS2N7236 by International Rectifier

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Price & Stock for JANS2N7236

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.22OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA 59
  • 1 $675.0000
  • 4 $585.0000
  • 8 $540.0000
$540.0000 / $675.0000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.22OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA 1
  • 1 $123.5000
$123.5000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.22OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA 1
  • 1 $215.5333
$215.5333 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.22OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA 1
  • 1 $215.5333
$215.5333 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.22OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA 1
  • 1 $787.5000
$787.5000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.22OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-254AA 35
  • 1 $787.5000
  • 5 $720.0000
  • 7 $675.0000
$675.0000 / $787.5000 Buy Now

Part Details for JANS2N7236

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JANS2N7236 Part Data Attributes

JANS2N7236 International Rectifier
Buy Now Datasheet
Compare Parts:
JANS2N7236 International Rectifier Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-254AA
Package Description FLANGE MOUNT, S-MSFM-P3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Reference Standard MIL-19500/595
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 150 ns
Turn-on Time-Max (ton) 120 ns

Alternate Parts for JANS2N7236

This table gives cross-reference parts and alternative options found for JANS2N7236. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N7236, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANKCA2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANS2N7236 vs JANKCA2N7236
JANTX2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANS2N7236 vs JANTX2N7236
JANTXV2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANS2N7236 vs JANTXV2N7236
2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANS2N7236 vs 2N7236
IRFM9140-JQR-BR1 18A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANS2N7236 vs IRFM9140-JQR-BR1
JANHCA2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 International Rectifier JANS2N7236 vs JANHCA2N7236
2N7236R1 18A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANS2N7236 vs 2N7236R1
JANS2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANS2N7236 vs JANS2N7236
JAN2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation JANS2N7236 vs JAN2N7236
JANS2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation JANS2N7236 vs JANS2N7236
Part Number Description Manufacturer Compare
2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANS2N7236 vs 2N7236U
IRFM9140-JQR-BR1 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANS2N7236 vs IRFM9140-JQR-BR1
2N7236 18A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANS2N7236 vs 2N7236
JANTXV2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANS2N7236 vs JANTXV2N7236
2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANS2N7236 vs 2N7236
IRFM9140-JQR-B 18A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANS2N7236 vs IRFM9140-JQR-B
2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors JANS2N7236 vs 2N7236U
2N7236R1 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANS2N7236 vs 2N7236R1
2N7236DPBF Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANS2N7236 vs 2N7236DPBF
IRFM9140D Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANS2N7236 vs IRFM9140D

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