Datasheets
JANSF2N7431 by:

Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3

Part Details for JANSF2N7431 by Infineon Technologies AG

Overview of JANSF2N7431 by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Part Details for JANSF2N7431

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JANSF2N7431 Part Data Attributes

JANSF2N7431 Infineon Technologies AG
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JANSF2N7431 Infineon Technologies AG Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, S-CSFM-P3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-CSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Qualified
Reference Standard MIL-19500/663
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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