Part Details for JANSH2N7432 by Infineon Technologies AG
Overview of JANSH2N7432 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Part Details for JANSH2N7432
JANSH2N7432 CAD Models
JANSH2N7432 Part Data Attributes
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JANSH2N7432
Infineon Technologies AG
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Datasheet
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JANSH2N7432
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | 3A001.A.1.A | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 201 A | |
| Qualification Status | Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for JANSH2N7432
This table gives cross-reference parts and alternative options found for JANSH2N7432. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSH2N7432, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHM7160PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | JANSH2N7432 vs IRHM7160PBF |
| IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Infineon Technologies AG | JANSH2N7432 vs IRHM8160 |
| IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | JANSH2N7432 vs IRHM8160 |