JANSR2N7550U2A
Infineon Technologies AG
Description: Power Field-Effect Transistor,

Overview of JANSR2N7550U2A by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 1 option )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation

Price & Stock for JANSR2N7550U2A by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # JANSR2N7550U2A
Avnet Americas Transistor MOSFET P-Channel 100V 47A 3-Pin SupIR-SMD - Bulk (Alt: JANSR2N7550U2A) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 30 Weeks, 2 Days Container: Bulk 0
RFQ

CAD Models for JANSR2N7550U2A by Infineon Technologies AG
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Part Data Attributes for JANSR2N7550U2A by Infineon Technologies AG

JANSR2N7550U2A
Infineon Technologies AG
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
30 Weeks, 2 Days
Date Of Intro
2020-09-14
Avalanche Energy Rating (Eas)
400 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
47 A
Drain-source On Resistance-Max
0.049 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
115 pF
JESD-30 Code
S-CSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
250 W
Pulsed Drain Current-Max (IDM)
188 A
Qualification Status
Qualified
Reference Standard
MIL-19500; RH - 300K Rad(Si)
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
220 ns
Turn-on Time-Max (ton)
130 ns
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  1. JANSR2N7550U2A
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    Power Field-Effect Transistor,
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Alternate Parts for JANSR2N7550U2A

This table gives cross-reference parts and alternative options found for JANSR2N7550U2A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7550U2A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRHNS597160 Power Field-Effect Transistor, Infineon Technologies AG JANSR2N7550U2A vs IRHNS597160

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