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JANTX2N6770

Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

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Price Range $84.9500

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Part Number Description Manufacturer Compare
IRF451 Transistors 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics JANTX2N6770 vs IRF451
IRF450 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTX2N6770 vs IRF450
JANTX2N6770 Transistors TRANSISTOR 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN, FET General Purpose Power Defense Supply Center Columbus JANTX2N6770 vs JANTX2N6770
JANTXV2N6770 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG JANTX2N6770 vs JANTXV2N6770
2N6770E3 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation JANTX2N6770 vs 2N6770E3
JAN2N6770 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency JANTX2N6770 vs JAN2N6770
2N6770PBF Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier JANTX2N6770 vs 2N6770PBF
2N6770R1 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTX2N6770 vs 2N6770R1
IRF450PBF Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTX2N6770 vs IRF450PBF
IRF450R1 Transistors 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6770 vs IRF450R1
Part Number Description Manufacturer Compare
IRF450 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTX2N6770 vs IRF450
JAN2N6770 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Defense Logistics Agency JANTX2N6770 vs JAN2N6770
JANTXV2N6770 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN Infineon Technologies AG JANTX2N6770 vs JANTXV2N6770
JANTX2N6770 Transistors TRANSISTOR 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN, FET General Purpose Power Defense Supply Center Columbus JANTX2N6770 vs JANTX2N6770
IRF451 Transistors 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics JANTX2N6770 vs IRF451
IRF450R1 Transistors 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6770 vs IRF450R1
2N6770R1 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTX2N6770 vs 2N6770R1
2N6770PBF Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier JANTX2N6770 vs 2N6770PBF
2N6770E3 Transistors Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 Microsemi Corporation JANTX2N6770 vs 2N6770E3

Global Popularity

Popularity in Transistors

Popularity in Power Field-Effect Transistors

Popularity by Region

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Medium

Good

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  • 1. Sweden
    100
  • 2. Latvia
    88
  • 3. Israel
    84
  • 4. United States
    81
  • 5. Argentina
    79
  • 6. Sri Lanka
    74
  • 7. Taiwan
    72
  • 8. Germany
    72
  • 9. Suriname
    71
  • 10. South Africa
    71

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