JANTX2N6788U by:

Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

Part Details for JANTX2N6788U by Defense Logistics Agency

Overview of JANTX2N6788U by Defense Logistics Agency

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for JANTX2N6788U

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JANTX2N6788U Part Data Attributes

JANTX2N6788U Defense Logistics Agency
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JANTX2N6788U Defense Logistics Agency Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Part Life Cycle Code Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY
Package Description HERMETIC SEALED, LCC-18
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 76 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.345 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-CQCC-N18
Number of Elements 1
Number of Terminals 18
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Qualified
Reference Standard MIL-19500/555
Surface Mount YES
Terminal Form NO LEAD
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTX2N6788U

This table gives cross-reference parts and alternative options found for JANTX2N6788U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6788U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JAN2N6788U Power Field-Effect Transistor, Defense Logistics Agency JANTX2N6788U vs JAN2N6788U
Part Number Description Manufacturer Compare
IRFE120-JQR-BE4 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC4-18 TT Electronics Resistors JANTX2N6788U vs IRFE120-JQR-BE4
2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, LCC-18/15 Microsemi Corporation JANTX2N6788U vs 2N6788U
JANTXV2N6788U Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier JANTX2N6788U vs JANTXV2N6788U
JANTX2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 Infineon Technologies AG JANTX2N6788U vs JANTX2N6788U
JAN2N6788U Power Field-Effect Transistor, Defense Logistics Agency JANTX2N6788U vs JAN2N6788U
IRFE120E4 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120E4
IRFE120PBF Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 International Rectifier JANTX2N6788U vs IRFE120PBF
IRFE120-JQR-B 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120-JQR-B
IRFE120 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 Infineon Technologies AG JANTX2N6788U vs IRFE120
IRFE120-JQR-B Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Resistors JANTX2N6788U vs IRFE120-JQR-B

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