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Transistors Power Field-Effect Transistors JANTX2N6788U

JANTX2N6788U
Description: Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15

Overview of JANTX2N6788U by Microsemi Corporation

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Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

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Part Data Attributes for JANTX2N6788U by Microsemi Corporation
Parametric Data

JANTX2N6788U
Microsemi Corporation
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
LCC
Package Description
CERAMIC, LCC-18/15
Pin Count
18/15
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Microsemi Corporation
Additional Feature
HIGH RELIABILTY
Avalanche Energy Rating (Eas)
76 mJ
Case Connection
SOURCE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CQCC-N15
Number of Elements
1
Number of Terminals
15
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
20 W
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Qualified
Reference Standard
MIL-19500
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
QUAD
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. JANTX2N6788U
    Microsemi Corporation
    Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15
    VS

Alternate Parts for JANTX2N6788U

This table gives cross-reference parts and alternative options found for JANTX2N6788U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6788U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFE120 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 Infineon Technologies AG JANTX2N6788U vs IRFE120
IRFE120-JQR-BE4 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC4-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120-JQR-BE4
IRFE120-JQR-B 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120-JQR-B
JAN2N6788U Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier JANTX2N6788U vs JAN2N6788U
IRFE120-JQR-B Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Resistors JANTX2N6788U vs IRFE120-JQR-B
IRFE120-JQR-BE4 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC4-18 TT Electronics Resistors JANTX2N6788U vs IRFE120-JQR-BE4
JANTXV2N6788U Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier JANTX2N6788U vs JANTXV2N6788U
JAN2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15 Microsemi Corporation JANTX2N6788U vs JAN2N6788U
2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, LCC-18/15 Microsemi Corporation JANTX2N6788U vs 2N6788U
IRFE120E4 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120E4
Part Number Description Manufacturer Compare
JANTX2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Defense Logistics Agency JANTX2N6788U vs JANTX2N6788U
IRFE120-JQR-BE4 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC4-18 TT Electronics Resistors JANTX2N6788U vs IRFE120-JQR-BE4
2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, LCC-18/15 Microsemi Corporation JANTX2N6788U vs 2N6788U
JANTXV2N6788U Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier JANTX2N6788U vs JANTXV2N6788U
JANTX2N6788U Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 Infineon Technologies AG JANTX2N6788U vs JANTX2N6788U
JAN2N6788U Power Field-Effect Transistor, Defense Logistics Agency JANTX2N6788U vs JAN2N6788U
IRFE120E4 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120E4
IRFE120PBF Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 International Rectifier JANTX2N6788U vs IRFE120PBF
IRFE120-JQR-B 4.5A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, CERAMIC, LCC-18 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6788U vs IRFE120-JQR-B
IRFE120 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-39, LCC-18 Infineon Technologies AG JANTX2N6788U vs IRFE120

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