Datasheets
JANTX2N6796 by:

Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN

Part Details for JANTX2N6796 by Microsemi Corporation

Overview of JANTX2N6796 by Microsemi Corporation

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for JANTX2N6796

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JANTX2N6796 Part Data Attributes

JANTX2N6796 Microsemi Corporation
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JANTX2N6796 Microsemi Corporation Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Part Package Code BCY
Package Description TO-39, 3 PIN
Pin Count 2
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.195 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Qualification Status Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTX2N6796

This table gives cross-reference parts and alternative options found for JANTX2N6796. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6796, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation JANTX2N6796 vs 2N6796
IRFF130-JQR-BR1 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors JANTX2N6796 vs IRFF130-JQR-BR1
IRFF130R1 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6796 vs IRFF130R1
2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Fairchild Semiconductor Corporation JANTX2N6796 vs 2N6796
2N6796 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6796 vs 2N6796
IRFF130-JQR-BR1 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6796 vs IRFF130-JQR-BR1
JANTX2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN Omnirel Corp JANTX2N6796 vs JANTX2N6796
JAN2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) JANTX2N6796 vs JAN2N6796
2N6796TXV Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Fairchild Semiconductor Corporation JANTX2N6796 vs 2N6796TXV
IRFF130 Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors JANTX2N6796 vs IRFF130
Part Number Description Manufacturer Compare
JANTX2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN International Rectifier JANTX2N6796 vs JANTX2N6782
IRFF110 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6796 vs IRFF110
2N6788 Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, International Rectifier JANTX2N6796 vs 2N6788
IRFF123 Power Field-Effect Transistor, 5A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor JANTX2N6796 vs IRFF123
2N6796 Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANTX2N6796 vs 2N6796
IRFF130 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N6796 vs IRFF130
IRFF123 5A, 60V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 Motorola Mobility LLC JANTX2N6796 vs IRFF123
IRFF131 8A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation JANTX2N6796 vs IRFF131
2N6782 Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANTX2N6796 vs 2N6782
IRFF120PBF Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN International Rectifier JANTX2N6796 vs IRFF120PBF

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