Part Details for JANTX2N6796U by Infineon Technologies AG
Results Overview of JANTX2N6796U by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
JANTX2N6796U Information
JANTX2N6796U by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTX2N6796U
JANTX2N6796U CAD Models
JANTX2N6796U Part Data Attributes
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JANTX2N6796U
Infineon Technologies AG
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Datasheet
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JANTX2N6796U
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Package Description | Hermetic Sealed, Lcc-18 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | High Reliability | |
| Avalanche Energy Rating (Eas) | 134 Mj | |
| Case Connection | Source | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.207 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Ceramic, Metal-Sealed Cofired | |
| Package Shape | Rectangular | |
| Package Style | Chip Carrier | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Qualified | |
| Reference Standard | Mil-19500/557 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | No Lead | |
| Terminal Position | Quad | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for JANTX2N6796U
This table gives cross-reference parts and alternative options found for JANTX2N6796U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6796U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFE130 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | JANTX2N6796U vs IRFE130 |
JANTX2N6796U Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the JANTX2N6796U is a standard SOT-223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliability in high-temperature applications, it is recommended to follow the recommended operating conditions, use a suitable thermal interface material, and ensure good thermal conduction to a heat sink or heat spreader.
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The maximum allowed voltage on the gate of the JANTX2N6796U is ±20V, but it is recommended to keep the gate voltage between -5V and +15V for reliable operation.
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Yes, the JANTX2N6796U can be used in switching applications, but it is recommended to follow the recommended switching frequency and ensure that the device is properly driven to avoid over-voltage and over-current conditions.
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To protect the JANTX2N6796U from ESD, it is recommended to follow proper handling and storage procedures, use ESD-protective packaging, and ensure that the device is properly grounded during assembly and testing.