| Infineon Technologies AG |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN |
$14.6900 / $15.4300
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| International Rectifier |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN |
$12.0000 / $13.5000
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| Omnirel Corp |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN |
$9.7500 / $13.0000
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| Harris Semiconductor |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
$12.0000
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| Vishay Siliconix |
MOSFET Transistor, N-Channel, TO-39 |
$13.4700 / $17.9600
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| Intersil Corporation |
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Microsemi Corporation |
Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| Unitrode Corporation |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Defense Logistics Agency |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Semicoa Semiconductors |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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