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Transistors Power Field-Effect Transistors JANTX2N6806

JANTX2N6806
Description: Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

Overview of JANTX2N6806 by Microsemi Corporation

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Where used in Applications: Industrial Automation

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Part Data Attributes for JANTX2N6806 by Microsemi Corporation
Parametric Data

JANTX2N6806
Microsemi Corporation
Buy Now
-
-
Pbfree Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
6.5 A
Drain-source On Resistance-Max
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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  1. JANTX2N6806
    Microsemi Corporation
    Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
    VS

Alternate Parts for JANTX2N6806

This table gives cross-reference parts and alternative options found for JANTX2N6806. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6806, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANHCA2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANTX2N6806 vs JANHCA2N6806
IRF9230 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTX2N6806 vs IRF9230
IRF9230R1 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6806 vs IRF9230R1
JANTXV2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTX2N6806 vs JANTXV2N6806
IRF9230 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANTX2N6806 vs IRF9230
2N6806PBF Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANTX2N6806 vs 2N6806PBF
2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JANTX2N6806 vs 2N6806
IRF9230R1 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors JANTX2N6806 vs IRF9230R1
JANTXV2N6806 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, Microsemi Corporation JANTX2N6806 vs JANTXV2N6806
IRF9230 Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTX2N6806 vs IRF9230
Part Number Description Manufacturer Compare
IRF9230 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC JANTX2N6806 vs IRF9230
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTX2N6806 vs IRF9232
IRF9240SMD-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors JANTX2N6806 vs IRF9240SMD-JQR-B
IRF9240ED Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JANTX2N6806 vs IRF9240ED
IRF9240 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC JANTX2N6806 vs IRF9240
MTM8P20 Power Field-Effect Transistor, 8A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JANTX2N6806 vs MTM8P20
IRF9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTX2N6806 vs IRF9240PBF
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANTX2N6806 vs IRF9232
2N6806PBF Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANTX2N6806 vs 2N6806PBF
RFM5P12 Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTX2N6806 vs RFM5P12

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