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Transistor

Part Details for JANTXV2N3867U4 by Microsemi Corporation

Overview of JANTXV2N3867U4 by Microsemi Corporation

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Part Details for JANTXV2N3867U4

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JANTXV2N3867U4 Part Data Attributes

JANTXV2N3867U4 Microsemi Corporation
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JANTXV2N3867U4 Microsemi Corporation Transistor
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 3 A
Collector-Base Capacitance-Max 120 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
JESD-30 Code R-XBCC-N3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 35 W
Qualification Status Not Qualified
Reference Standard MIL-PRF-19500
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 0.75 V

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