Part Details for JANTXV2N6756 by Harris Semiconductor
Overview of JANTXV2N6756 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Part Details for JANTXV2N6756
JANTXV2N6756 CAD Models
JANTXV2N6756 Part Data Attributes
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JANTXV2N6756
Harris Semiconductor
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Datasheet
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JANTXV2N6756
Harris Semiconductor
Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | RADIATION HARDENED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 85 ns | |
| Turn-on Time-Max (ton) | 105 ns |
Alternate Parts for JANTXV2N6756
This table gives cross-reference parts and alternative options found for JANTXV2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF130-JQR-BR1 | 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6756 vs IRF130-JQR-BR1 |
| IRF131 | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | JANTXV2N6756 vs IRF131 |
| JANTXV2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | JANTXV2N6756 vs JANTXV2N6756 |
| JANTXV2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corporation | JANTXV2N6756 vs JANTXV2N6756 |
| IRF133 | 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | JANTXV2N6756 vs IRF133 |
| IRF130 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTXV2N6756 vs IRF130 |
| JANTX2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | JANTXV2N6756 vs JANTX2N6756 |
| JANTXV2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | JANTXV2N6756 vs JANTXV2N6756 |
| JANHCA2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | JANTXV2N6756 vs JANHCA2N6756 |
| IRF130 | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | JANTXV2N6756 vs IRF130 |