There are no models available for this part yet.
Overview of JANTXV2N6760 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for JANTXV2N6760 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
|
$42.0000 | Buy Now |
CAD Models for JANTXV2N6760 by Infineon Technologies AG
Part Data Attributes for JANTXV2N6760 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
TO-3, 2 PIN
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
1.7 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
400 V
|
Drain Current-Max (ID)
|
5.5 A
|
Drain-source On Resistance-Max
|
1.22 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-204AA
|
JESD-30 Code
|
O-MBFM-P2
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
METAL
|
Package Shape
|
ROUND
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
75 W
|
Pulsed Drain Current-Max (IDM)
|
22 A
|
Qualification Status
|
Qualified
|
Reference Standard
|
MIL-19500/542
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
PIN/PEG
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for JANTXV2N6760
This table gives cross-reference parts and alternative options found for JANTXV2N6760. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6760, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
JAN2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | JANTXV2N6760 vs JAN2N6760 |
UFN331 | Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | JANTXV2N6760 vs UFN331 |
2N6760R1 | 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6760 vs 2N6760R1 |
IRF331 | Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTXV2N6760 vs IRF331 |
IRF332 | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | JANTXV2N6760 vs IRF332 |
2N6760 | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-3 | Intersil Corporation | JANTXV2N6760 vs 2N6760 |
JANTX2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTXV2N6760 vs JANTX2N6760 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | JANTXV2N6760 vs 2N6760 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | JANTXV2N6760 vs 2N6760 |
2N6760 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | JANTXV2N6760 vs 2N6760 |
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