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Transistors Power Field-Effect Transistors JANTXV2N6760

JANTXV2N6760
Description: 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Overview of JANTXV2N6760 by Motorola Mobility LLC

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Part Data Attributes for JANTXV2N6760 by Motorola Mobility LLC
Parametric Data

JANTXV2N6760
Motorola Mobility LLC
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
5.5 A
Drain-source On Resistance-Max
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
80 pF
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
Terminal Finish
NOT SPECIFIED
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
65 ns
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  1. JANTXV2N6760
    Motorola Mobility LLC
    5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
    VS

Alternate Parts for JANTXV2N6760

This table gives cross-reference parts and alternative options found for JANTXV2N6760. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6760, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6760 vs JAN2N6760
UFN331 Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6760 vs UFN331
2N6760R1 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6760 vs 2N6760R1
IRF331 Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs IRF331
JANTXV2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANTXV2N6760 vs JANTXV2N6760
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANTXV2N6760 vs IRF332
2N6760 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-3 Intersil Corporation JANTXV2N6760 vs 2N6760
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs JANTX2N6760
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs 2N6760
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JANTXV2N6760 vs 2N6760
Part Number Description Manufacturer Compare
IRF330-JQR-B Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors JANTXV2N6760 vs IRF330-JQR-B
IRF320 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JANTXV2N6760 vs IRF320
BUP62 Power Field-Effect Transistor, 6.8A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTXV2N6760 vs BUP62
IRF322 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs IRF322
JANHCA2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANTXV2N6760 vs JANHCA2N6760
IRF322 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANTXV2N6760 vs IRF322
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix JANTXV2N6760 vs 2N6760
IRF322 2.8A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC JANTXV2N6760 vs IRF322
IRF330R Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs IRF330R
BUZ63 Power Field-Effect Transistor, 7.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors JANTXV2N6760 vs BUZ63

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