Manufacturer | Description | Price Range | Set Alert | Details |
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Infineon Technologies AG | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | $38.4000 |
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Harris Semiconductor | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | $35.9989 / $44.9986 |
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Semicoa Semiconductors | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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Defense Logistics Agency | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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Intersil Corporation | 3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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Microsemi Corporation | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, |
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International Rectifier | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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