| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Infineon Technologies AG | Power Field-Effect Transistor, 1.5A I(D), 500V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | $39.1700 |
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| International Rectifier | Power Field-Effect Transistor, 1.5A I(D), 500V, 3.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| SGS Thomson | MOSFET Transistor, N-Channel, TO-39 | $51.3790 |
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| Harris Semiconductor | Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | $47.7825 / $61.6548 |
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| Microsemi Corporation | Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, |
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| Intersil Corporation | 1.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Defense Logistics Agency | Power Field-Effect Transistor, 1.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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