Part Details for JANTXV2N6849 by International Rectifier
Overview of JANTXV2N6849 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTXV2N6849
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 8 |
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$24.0000 | Buy Now |
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Bristol Electronics | 16 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 54 |
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$28.6470 / $31.0343 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 1 |
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$19.2780 / $20.6550 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 10 |
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$23.1690 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 7 |
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$23.1690 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 12 |
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$24.7646 / $26.0680 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 6 |
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$26.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-205AF | 148 |
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$27.2000 / $34.0000 | Buy Now |
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NexGen Digital | 10 |
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RFQ |
Part Details for JANTXV2N6849
JANTXV2N6849 CAD Models
JANTXV2N6849 Part Data Attributes
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JANTXV2N6849
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANTXV2N6849
International Rectifier
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | BCY | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 92 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.345 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/564 | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6849
This table gives cross-reference parts and alternative options found for JANTXV2N6849. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6849, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANS2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Infineon Technologies AG | JANTXV2N6849 vs JANS2N6849 |
| 2N6849-JQR-A | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6849 vs 2N6849-JQR-A |
| 2N6849-JQR-A | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTXV2N6849 vs 2N6849-JQR-A |
| 2N6849 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | JANTXV2N6849 vs 2N6849 |
| IRFF9130 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Rochester Electronics LLC | JANTXV2N6849 vs IRFF9130 |
| 2N6849R1 | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | JANTXV2N6849 vs 2N6849R1 |
| 2N6849R1 | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6849 vs 2N6849R1 |
| 2N6849-QR-B | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6849 vs 2N6849-QR-B |
| 2N6849TX | 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | JANTXV2N6849 vs 2N6849TX |
| 2N6849TXV | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | JANTXV2N6849 vs 2N6849TXV |