Manufacturer | Description | Price Range | Set Alert | Details |
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Infineon Technologies AG | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | $57.5300 / $60.4100 |
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Harris Semiconductor | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | $20.7000 / $115.6824 |
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International Rectifier | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | $92.5459 / $115.6824 |
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Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 200V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF | $104.1142 / $115.6824 |
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Intersil Corporation | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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Microsemi Corporation | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, |
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Semicoa Semiconductors | Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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