Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
JDV3C11
JDV3C11
Obsolete
SC-59
R-PDSO-G3
3
unknown
EAR99
8541.10.00.80
Toshiba America Electronic Components
5.82
COMMON CATHODE, 2 ELEMENTS
6%
5
SILICON
VARIABLE CAPACITANCE DIODE
R-PDSO-G3
e0
2
3
125 °C
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
Not Qualified
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
KV1470 Diodes | Variable Capacitance Diode, Very High Frequency, 70pF C(T), 18V, Silicon, SOT-23, 3 PIN | Asahi Kasei Power Devices Corporation | JDV3C11 vs KV1470 |
934056469215 Diodes | DIODE 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, PLASTIC, SMD, SST3, 3 PIN, Variable Capacitance Diode | NXP Semiconductors | JDV3C11 vs 934056469215 |
GVD30504-004 Diodes | Variable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt | Sprague-Goodman | JDV3C11 vs GVD30504-004 |
KV3901A-154-4 Diodes | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 25V, Silicon, Hyperabrupt | Microsemi Corporation | JDV3C11 vs KV3901A-154-4 |