There are no models available for this part yet.
Overview of K3N6V1000E-GC100 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
CAD Models for K3N6V1000E-GC100 by Samsung Semiconductor
Part Data Attributes for K3N6V1000E-GC100 by Samsung Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
SOIC
|
|
Package Description
|
SOP,
|
|
Pin Count
|
44
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.71
|
|
Access Time-Max
|
100 ns
|
|
Alternate Memory Width
|
8
|
|
JESD-30 Code
|
R-PDSO-G44
|
|
Length
|
28.5 mm
|
|
Memory Density
|
33554432 bit
|
|
Memory IC Type
|
MASK ROM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Terminals
|
44
|
|
Number of Words
|
2097152 words
|
|
Number of Words Code
|
2000000
|
|
Operating Mode
|
ASYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
2MX16
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
SOP
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Parallel/Serial
|
PARALLEL
|
|
Peak Reflow Temperature (Cel)
|
225
|
|
Qualification Status
|
Not Qualified
|
|
Seated Height-Max
|
3.1 mm
|
|
Supply Current-Max
|
0.04 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
1.27 mm
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Width
|
12.6 mm
|
Alternate Parts for K3N6V1000E-GC100
This table gives cross-reference parts and alternative options found for K3N6V1000E-GC100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K3N6V1000E-GC100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K3N6V1000E-GC10 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | Samsung Semiconductor | K3N6V1000E-GC100 vs K3N6V1000E-GC10 |
| UPD23C32080ALGX-XXX | MASK ROM, 2MX16, 100ns, MOS, PDSO44, 15.24 MM, PLASTIC, SOP-44 | NEC Electronics Group | K3N6V1000E-GC100 vs UPD23C32080ALGX-XXX |
| K3N6V1000F-GC100 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | Samsung Semiconductor | K3N6V1000E-GC100 vs K3N6V1000F-GC100 |
| UPD23C32040ALGX-XXX-A | MASK ROM, 2MX16, 100ns, MOS, PDSO44, 15.24 MM, LEAD FREE, PLASTIC, SOP-44 | NEC Electronics America Inc | K3N6V1000E-GC100 vs UPD23C32040ALGX-XXX-A |
| UPD23C32000ALGX-XXX-A | 2MX16 MASK PROM, 100ns, PDSO44, 15.24 MM, LEAD FREE, PLASTIC, SOP-44 | Renesas Electronics Corporation | K3N6V1000E-GC100 vs UPD23C32000ALGX-XXX-A |
| MX23L3211MC-10 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.500 INCH, MO-175, SOP-44 | Macronix International Co Ltd | K3N6V1000E-GC100 vs MX23L3211MC-10 |
| K3P6V1000B-GC10 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | Samsung Semiconductor | K3N6V1000E-GC100 vs K3P6V1000B-GC10 |
| K3P6V1000B-GC100 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | Samsung Semiconductor | K3N6V1000E-GC100 vs K3P6V1000B-GC100 |
| KM23V32005BG-10 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | Samsung Semiconductor | K3N6V1000E-GC100 vs KM23V32005BG-10 |
| K3P6V1000F-GC10 | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.500 INCH, SOP-44 | Samsung Semiconductor | K3N6V1000E-GC100 vs K3P6V1000F-GC10 |