Part Details for K4D263238M-QC45 by Samsung Semiconductor
Overview of K4D263238M-QC45 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for K4D263238M-QC45
K4D263238M-QC45 CAD Models
K4D263238M-QC45 Part Data Attributes
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K4D263238M-QC45
Samsung Semiconductor
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Datasheet
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K4D263238M-QC45
Samsung Semiconductor
DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | QFP | |
| Package Description | TQFP, TQFP100,.7X.9 | |
| Pin Count | 100 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 222 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PQFP-G100 | |
| JESD-609 Code | e0 | |
| Length | 20 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 100 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TQFP | |
| Package Equivalence Code | TQFP100,.7X.9 | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8,FP | |
| Standby Current-Max | 0.09 A | |
| Supply Current-Max | 0.6 mA | |
| Supply Voltage-Max (Vsup) | 2.625 V | |
| Supply Voltage-Min (Vsup) | 2.375 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | QUAD | |
| Width | 14 mm |
Alternate Parts for K4D263238M-QC45
This table gives cross-reference parts and alternative options found for K4D263238M-QC45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D263238M-QC45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EDD1232AAFA-6B-E | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, ROHS COMPLIANT, PLASTIC, LQFP-100 | Elpida Memory Inc | K4D263238M-QC45 vs EDD1232AAFA-6B-E |
| K4D263238F-QC50 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | K4D263238M-QC45 vs K4D263238F-QC50 |
| K4D263238I-QC500 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | K4D263238M-QC45 vs K4D263238I-QC500 |
| M13S128324A-5LG | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, LEAD FREE, LQFP-100 | Elite Semiconductor Memory Technology Inc | K4D263238M-QC45 vs M13S128324A-5LG |
| MT46V4M32LG-45 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 0.65 MM PITCH, PLASTIC, TQFP-100 | Micron Technology Inc | K4D263238M-QC45 vs MT46V4M32LG-45 |
| K4D263238I-UC500 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, LEAD FREE, TQFP-100 | Samsung Semiconductor | K4D263238M-QC45 vs K4D263238I-UC500 |
| K4D263238F-QC500 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | K4D263238M-QC45 vs K4D263238F-QC500 |
| K4D263238M-QC500 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | K4D263238M-QC45 vs K4D263238M-QC500 |
| MT46V4M32LG-4 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 0.65 MM PITCH, PLASTIC, TQFP-100 | Micron Technology Inc | K4D263238M-QC45 vs MT46V4M32LG-4 |
| MT46V4M32V1LG-5 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 0.65 MM PITCH, PLASTIC, TQFP-100 | Micron Technology Inc | K4D263238M-QC45 vs MT46V4M32V1LG-5 |