Part Details for K4H561638N-LCCC by Samsung Semiconductor
Results Overview of K4H561638N-LCCC by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
K4H561638N-LCCC Information
K4H561638N-LCCC by Samsung Semiconductor is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for K4H561638N-LCCC
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 217 |
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RFQ |
US Tariff Estimator: K4H561638N-LCCC by Samsung Semiconductor
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for K4H561638N-LCCC
K4H561638N-LCCC Part Data Attributes
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K4H561638N-LCCC
Samsung Semiconductor
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Datasheet
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K4H561638N-LCCC
Samsung Semiconductor
DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Time-Max | 0.65 ns | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e6 | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.14 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.635 mm | |
| Terminal Position | DUAL |
Alternate Parts for K4H561638N-LCCC
This table gives cross-reference parts and alternative options found for K4H561638N-LCCC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H561638N-LCCC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4H561638N-LLCC0 | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | K4H561638N-LCCC vs K4H561638N-LLCC0 |
| K4H561638N-LCCC0 | Samsung Semiconductor | Check for Price | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | K4H561638N-LCCC vs K4H561638N-LCCC0 |
K4H561638N-LCCC Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the K4H561638N-LCCC is 0°C to 85°C.
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To ensure signal integrity and reduce noise, use a well-designed PCB with proper impedance matching, signal routing, and decoupling. Also, follow the recommended layout guidelines and termination schemes provided in the datasheet.
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The recommended refresh rate for the K4H561638N-LCCC is 8192 refreshes per 64ms, with a refresh interval of 7.8us (tREFI).
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No, the K4H561638N-LCCC is a DDR2 SDRAM and is not compatible with DDR3 or DDR4 systems. It operates at a different voltage and has different signal timings and protocols.
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Follow the recommended power-up and power-down sequences outlined in the datasheet, which include specific voltage and clock signal requirements to ensure proper initialization and shutdown.