Part Details for L2N7002DW1T1G by LRC Leshan Radio Co Ltd
Overview of L2N7002DW1T1G by LRC Leshan Radio Co Ltd
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Energy and Power Systems
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Price & Stock for L2N7002DW1T1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
L2N7002DW1T1G
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Avnet Asia | Trans MOSFET Array Dual N-CH 60V ±0.115A 6-Pin SC-88 T/R (Alt: L2N7002DW1T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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Part Details for L2N7002DW1T1G
L2N7002DW1T1G CAD Models
L2N7002DW1T1G Part Data Attributes
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L2N7002DW1T1G
LRC Leshan Radio Co Ltd
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Datasheet
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L2N7002DW1T1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 419B-02, SC-88, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LESHAN RADIO CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.38 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |