Datasheets
L2N7002DW1T1G by: LRC Leshan Radio Co Ltd

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 419B-02, SC-88, 6 PIN

Part Details for L2N7002DW1T1G by LRC Leshan Radio Co Ltd

Overview of L2N7002DW1T1G by LRC Leshan Radio Co Ltd

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Price & Stock for L2N7002DW1T1G

Part # Distributor Description Stock Price Buy
DISTI # L2N7002DW1T1G
Avnet Asia Trans MOSFET Array Dual N-CH 60V ±0.115A 6-Pin SC-88 T/R (Alt: L2N7002DW1T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days 0
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Part Details for L2N7002DW1T1G

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L2N7002DW1T1G Part Data Attributes

L2N7002DW1T1G LRC Leshan Radio Co Ltd
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L2N7002DW1T1G LRC Leshan Radio Co Ltd Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 419B-02, SC-88, 6 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.115 A
Drain-source On Resistance-Max 7.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.38 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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