Part Details for M470L3223BT0-LA2 by Samsung Semiconductor
Overview of M470L3223BT0-LA2 by Samsung Semiconductor
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Computing and Data Storage
Part Details for M470L3223BT0-LA2
M470L3223BT0-LA2 CAD Models
M470L3223BT0-LA2 Part Data Attributes
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M470L3223BT0-LA2
Samsung Semiconductor
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Datasheet
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M470L3223BT0-LA2
Samsung Semiconductor
DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | MODULE | |
Package Description | , | |
Pin Count | 200 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.75 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XDMA-N200 | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX64 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL |
Alternate Parts for M470L3223BT0-LA2
This table gives cross-reference parts and alternative options found for M470L3223BT0-LA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470L3223BT0-LA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HYMP532S64CLP6-C4 | DDR DRAM Module, 32MX64, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-200 | SK Hynix Inc | M470L3223BT0-LA2 vs HYMP532S64CLP6-C4 |
HYS64D32301EU-6-D | DDR DRAM Module, 32MX64, 0.7ns, CMOS, GREEN, UDIMM-184 | Qimonda AG | M470L3223BT0-LA2 vs HYS64D32301EU-6-D |
M368L3223FTN-LCC | DDR DRAM Module, 32MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | M470L3223BT0-LA2 vs M368L3223FTN-LCC |
V916916B24QAFW-E4 | DDR DRAM Module, 32MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | ProMOS Technologies Inc | M470L3223BT0-LA2 vs V916916B24QAFW-E4 |
M368L3324BTM-CC4 | DDR DRAM Module, 32MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | M470L3223BT0-LA2 vs M368L3324BTM-CC4 |
M470L3324BU0-LB0 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470L3223BT0-LA2 vs M470L3324BU0-LB0 |
V826632K24SATG-D3 | 32MX64 DDR DRAM MODULE, 0.65ns, DMA184, DIMM-184 | ProMOS Technologies Inc | M470L3223BT0-LA2 vs V826632K24SATG-D3 |
EBD25UC8AAFA-6B | DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 | Elpida Memory Inc | M470L3223BT0-LA2 vs EBD25UC8AAFA-6B |
MT8HSF3264HDY-667XX | DDR DRAM Module, 32MX64, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | M470L3223BT0-LA2 vs MT8HSF3264HDY-667XX |
V826632K24SAIL-B0 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | ProMOS Technologies Inc | M470L3223BT0-LA2 vs V826632K24SAIL-B0 |