Part Details for MC-458CB645FA-A10B by NEC Electronics Group
Overview of MC-458CB645FA-A10B by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 71V016SA10BFG | Renesas Electronics Corporation | 3.3V 64K x 16 Bit Asynchronous Static RAM | |
| 71T016SA10BF | Renesas Electronics Corporation | 2.5V 64K X 16 SRAM | |
| 71V016SA10BF | Renesas Electronics Corporation | 3.3V 64K x 16 Bit Asynchronous Static RAM |
Part Details for MC-458CB645FA-A10B
MC-458CB645FA-A10B CAD Models
MC-458CB645FA-A10B Part Data Attributes
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MC-458CB645FA-A10B
NEC Electronics Group
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Datasheet
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MC-458CB645FA-A10B
NEC Electronics Group
Synchronous DRAM Module, 8MX64, 7ns, CMOS, DIMM-168
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | DIMM | |
| Package Description | , | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for MC-458CB645FA-A10B
This table gives cross-reference parts and alternative options found for MC-458CB645FA-A10B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC-458CB645FA-A10B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MH8V645AWZJ-6 | EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 | Mitsubishi Electric | MC-458CB645FA-A10B vs MH8V645AWZJ-6 |
| EDI4G649EV7D | EDO DRAM Module, 8MX64, 70ns, CMOS, DIMM-168 | Electronic Designs Inc | MC-458CB645FA-A10B vs EDI4G649EV7D |
| KMM364E803AS-7 | EDO DRAM Module, 8MX64, 70ns, CMOS, DIMM-168 | Samsung Semiconductor | MC-458CB645FA-A10B vs KMM364E803AS-7 |
| KMM364E884CS-5 | EDO DRAM Module, 8MX64, 50ns, CMOS | Samsung Semiconductor | MC-458CB645FA-A10B vs KMM364E884CS-5 |
| MT4LSDT864AG-13EF1 | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, DIMM-168 | Micron Technology Inc | MC-458CB645FA-A10B vs MT4LSDT864AG-13EF1 |
| HYS64V8220GU-8B | Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 | Infineon Technologies AG | MC-458CB645FA-A10B vs HYS64V8220GU-8B |
| VS864648041DTG-8H | Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 | Vanguard International Semiconductor Corporation | MC-458CB645FA-A10B vs VS864648041DTG-8H |
| M364E0803CT0-C50 | EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 | Samsung Semiconductor | MC-458CB645FA-A10B vs M364E0803CT0-C50 |
| V43648S04VTG-12 | Synchronous DRAM Module, 8MX64, 7ns, CMOS | Mosel Vitelic Corporation | MC-458CB645FA-A10B vs V43648S04VTG-12 |
| MT8LDT864AG-5 | Fast Page DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 | Micron Technology Inc | MC-458CB645FA-A10B vs MT8LDT864AG-5 |