Transistors
MG12600WB-BR2MM
Description: Insulated Gate Bipolar Transistor,

Overview of MG12600WB-BR2MM by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Price & Stock for MG12600WB-BR2MM by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 34AC4297
Newark 1200V 600A Igbt Module Package Wb Ckt B/Bulk |Littelfuse MG12600WB-BR2MM RoHS: Not Compliant Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # C1S425201247087
Chip1Stop IGBT discrete RoHS: Compliant 8
  • 1 $205.0000
$205.0000 Buy Now

CAD Models for MG12600WB-BR2MM by Littelfuse Inc
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Part Data Attributes for MG12600WB-BR2MM by Littelfuse Inc

MG12600WB-BR2MM
Littelfuse Inc
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
LITTELFUSE INC
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Case Connection
ISOLATED
Collector Current-Max (IC)
750 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max
6.4 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Number of Terminals
11
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Reference Standard
UL RECOGNIZED
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1290 ns
Turn-on Time-Nom (ton)
520 ns
VCEsat-Max
2.15 V
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  1. MG12600WB-BR2MM
    Littelfuse Inc
    Insulated Gate Bipolar Transistor,
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