There are no models available for this part yet.
Overview of MG150Q2YS91 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for MG150Q2YS91 by Toshiba America Electronic Components
Part Data Attributes for MG150Q2YS91 by Toshiba America Electronic Components
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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TOSHIBA CORP
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Package Description
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FLANGE MOUNT, R-PUFM-X7
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Collector Current-Max (IC)
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150 A
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Collector-Emitter Voltage-Max
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1200 V
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Configuration
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SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
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JESD-30 Code
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R-PUFM-X7
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Number of Elements
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2
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Number of Terminals
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7
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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UNSPECIFIED
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Terminal Position
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UPPER
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Transistor Application
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POWER CONTROL
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Transistor Element Material
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SILICON
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Alternate Parts for MG150Q2YS91
This table gives cross-reference parts and alternative options found for MG150Q2YS91. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG150Q2YS91, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG150Q2YS91 vs MG300N1US1 |
| 2MBI150NB-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | MG150Q2YS91 vs 2MBI150NB-120 |
| CM600HA-24H | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG150Q2YS91 vs CM600HA-24H |
| MG100Q2YS50 | TRANSISTOR IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG150Q2YS91 vs MG100Q2YS50 |
| MG300Q1US2 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG150Q2YS91 vs MG300Q1US2 |
| CM150DU-24H | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG150Q2YS91 vs CM150DU-24H |
| 1MBI200S-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG150Q2YS91 vs 1MBI200S-120 |
| CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MG150Q2YS91 vs CM150DY-24T |
| MG500Q1US1 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG150Q2YS91 vs MG500Q1US1 |
| MG100Q2YS40 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG150Q2YS91 vs MG100Q2YS40 |