Part Details for MG300J2YS11 by Toshiba America Electronic Components
Overview of MG300J2YS11 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG300J2YS11
MG300J2YS11 CAD Models
MG300J2YS11 Part Data Attributes
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MG300J2YS11
Toshiba America Electronic Components
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Datasheet
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MG300J2YS11
Toshiba America Electronic Components
TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Number of Elements | 2 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Transistor Element Material | SILICON |
Alternate Parts for MG300J2YS11
This table gives cross-reference parts and alternative options found for MG300J2YS11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300J2YS11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM50GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, MOUDLE-7 | Infineon Technologies AG | MG300J2YS11 vs BSM50GB60DLCHOSA1 |
| CM300DU-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG300J2YS11 vs CM300DU-12H |
| CM300DY-13T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MG300J2YS11 vs CM300DY-13T |
| 2MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN | Fuji Electric Co Ltd | MG300J2YS11 vs 2MBI300L-060 |
| MG300H1US1 | TRANSISTOR 300 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J2YS11 vs MG300H1US1 |
| CM300DY-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MG300J2YS11 vs CM300DY-24H |
| MG100J2YS1 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94C3A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J2YS11 vs MG100J2YS1 |
| 1MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 5 PIN | Fuji Electric Co Ltd | MG300J2YS11 vs 1MBI300L-060 |
| APTGT300A60 | Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | MG300J2YS11 vs APTGT300A60 |
| CM300HA-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | MG300J2YS11 vs CM300HA-12H |