Part Details for MG300Q2YS61 by Toshiba America Electronic Components
Overview of MG300Q2YS61 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for MG300Q2YS61
MG300Q2YS61 CAD Models
MG300Q2YS61 Part Data Attributes
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MG300Q2YS61
Toshiba America Electronic Components
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Datasheet
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MG300Q2YS61
Toshiba America Electronic Components
TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2700 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 600 ns | |
| Turn-on Time-Nom (ton) | 500 ns | |
| VCEsat-Max | 2.6 V |
Alternate Parts for MG300Q2YS61
This table gives cross-reference parts and alternative options found for MG300Q2YS61. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300Q2YS61, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q2YS61 vs MG300N1US1 |
| 2MBI150NB-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | MG300Q2YS61 vs 2MBI150NB-120 |
| CM600HA-24H | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG300Q2YS61 vs CM600HA-24H |
| MG100Q2YS50 | TRANSISTOR IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q2YS61 vs MG100Q2YS50 |
| MG300Q1US2 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q2YS61 vs MG300Q1US2 |
| CM150DU-24H | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG300Q2YS61 vs CM150DU-24H |
| 1MBI200S-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG300Q2YS61 vs 1MBI200S-120 |
| CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MG300Q2YS61 vs CM150DY-24T |
| MG500Q1US1 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q2YS61 vs MG500Q1US1 |
| MG100Q2YS40 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q2YS61 vs MG100Q2YS40 |