Part Details for MIAA10WB600TMH by IXYS Corporation
Overview of MIAA10WB600TMH by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for MIAA10WB600TMH
| Part # | Distributor | Description | Stock | Price | Buy | |
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New Advantage Corporation | IGBT PIM MOD.3PH D.BRID.SEVEN 13A 1200V MINIPACK2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 25 |
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$38.2400 / $40.9800 | Buy Now |
Part Details for MIAA10WB600TMH
MIAA10WB600TMH CAD Models
MIAA10WB600TMH Part Data Attributes
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MIAA10WB600TMH
IXYS Corporation
Buy Now
Datasheet
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MIAA10WB600TMH
IXYS Corporation
Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, MODULE-23
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | MODULE | |
| Package Description | MODULE-23 | |
| Pin Count | 23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING, LOW SATURATION VOLTAGE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 18 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-P23 | |
| Number of Elements | 7 | |
| Number of Terminals | 23 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 260 ns | |
| Turn-on Time-Nom (ton) | 60 ns | |
| VCEsat-Max | 2.6 V |