Part Details for MIAA20WD600TMH by IXYS Corporation
Overview of MIAA20WD600TMH by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MIAA20WD600TMH
Part # | Distributor | Description | Stock | Price | Buy | |
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New Advantage Corporation | IGBT PIM MOD.2PH D.BRID.SIX 20A 600V NPT MINIPACK2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 46 |
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$41.2900 / $44.2400 | Buy Now |
Part Details for MIAA20WD600TMH
MIAA20WD600TMH CAD Models
MIAA20WD600TMH Part Data Attributes:
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MIAA20WD600TMH
IXYS Corporation
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Datasheet
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MIAA20WD600TMH
IXYS Corporation
Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 29 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-P23 | |
Number of Elements | 6 | |
Number of Terminals | 23 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 315 ns | |
Turn-on Time-Nom (ton) | 80 ns | |
VCEsat-Max | 2.7 V |