Part Details for MJ11016G by onsemi
Results Overview of MJ11016G by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJ11016G Information
MJ11016G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJ11016G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
26K4505
|
Newark | Bipolar Transistor, Npn, 120V, To-204, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:120V, Power Dissipation Pd:200W, Dc Collector Current:30A, Rf Transistor Case:To-3, No. Of Pins:2Pins, Dc Current Gain Hfe:200Hfe Rohs Compliant: Yes |Onsemi MJ11016G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 126 |
|
$3.1900 / $5.4000 | Buy Now |
|
DISTI #
26K4505
|
Avnet Americas | - Bulk (Alt: 26K4505) COO: Mexico RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 174 Partner Stock |
|
$3.1900 / $5.4000 | Buy Now |
|
DISTI #
MJ11016G
|
Avnet Americas | - Trays (Alt: MJ11016G) COO: Mexico RoHS: Compliant Min Qty: 300 Package Multiple: 100 Lead time: 14 Weeks, 0 Days Container: Tray | 100 Factory Stock |
|
$2.7890 / $3.1874 | Buy Now |
|
DISTI #
MJ11016
|
TME | Transistor: NPN, bipolar, Darlington, 120V, 30A, 200W, TO3 Min Qty: 1 | 79 |
|
$3.9300 / $5.1000 | Buy Now |
|
|
ComSIT USA | Electronic Component RoHS: Not Compliant |
|
|
RFQ | |
|
DISTI #
MJ11016G
|
Richardson RFPD | POWER BJT TRANSISTOR RoHS: Compliant Min Qty: 300 | 0 |
|
$2.7900 | Buy Now |
|
|
Chip 1 Exchange | INSTOCK | 11245 |
|
RFQ | |
|
DISTI #
MJ11016G
|
Avnet Asia | (Alt: MJ11016G) RoHS: Compliant Min Qty: 300 Package Multiple: 100 Lead time: 14 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
MJ11016G
|
Avnet Silica | (Alt: MJ11016G) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 15 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
|
Chip Stock | 30A,120VNPNDarlingtonBipolarPowerTransistor | 3900 |
|
RFQ |
US Tariff Estimator: MJ11016G by onsemi
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MJ11016G
MJ11016G CAD Models
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
MJ11016G Part Data Attributes
|
|
MJ11016G
onsemi
Buy Now
Datasheet
|
Compare Parts:
MJ11016G
onsemi
30 A, 120 V NPN Darlington Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-204 (TO-3) | |
| Package Description | Case 1-07, To-3, 2 Pin | |
| Pin Count | 2 | |
| Manufacturer Package Code | 1-07 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 30 A | |
| Collector-Emitter Voltage-Max | 120 V | |
| Configuration | Darlington With Built-In Diode And Resistor | |
| DC Current Gain-Min (hFE) | 200 | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Metal | |
| Package Shape | Round | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | Npn | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | Pin/Peg | |
| Terminal Position | Bottom | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 4 Mhz |
Alternate Parts for MJ11016G
This table gives cross-reference parts and alternative options found for MJ11016G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJ11016G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJ11016 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | MJ11016G vs MJ11016 |
| MJ11016 | SPC Multicomp | Check for Price | Power Bipolar Transistor, | MJ11016G vs MJ11016 |
MJ11016G Frequently Asked Questions (FAQ)
-
The maximum SOA for the MJ11016G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by consulting the device's thermal derating curve and ensuring that the device does not exceed its maximum junction temperature.
-
To ensure the MJ11016G is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to a value that ensures the device operates within its linear region.
-
For optimal thermal management, it is recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This can be achieved by using a thermal pad or heat sink, and ensuring that the device is mounted on a thick copper plane. Additionally, it is recommended to follow good PCB design practices, such as minimizing thermal resistance and using thermal vias to dissipate heat.
-
To handle ESD protection for the MJ11016G, it is recommended to follow standard ESD protection practices, such as using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices (such as TVS diodes or ESD protection arrays) into the circuit design.
-
The reliability and lifespan expectations for the MJ11016G are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. However, onsemi provides reliability data and qualification tests that can help estimate the device's lifespan. It is recommended to consult the datasheet and onsemi's reliability reports for more information.