Part Details for MJD122G by onsemi
Results Overview of MJD122G by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (5 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
MJD122G Information
MJD122G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD122G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81AC9143
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Newark | Bip Dpak Npn 8A 100V Rohs Compliant: Yes |Onsemi MJD122G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 11649 |
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$0.4490 / $1.1900 | Buy Now |
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DISTI #
42K1269
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Newark | Bipolar Transistor, Npn, 100V, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:100V, Power Dissipation Pd:1.75W, Dc Collector Current:8A, Rf Transistor Case:To-252 (Dpak), No. Of Pins:3Pins, Dc Current Gain Hfe:12Hfe Rohs Compliant: Yes |Onsemi MJD122G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 544 |
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$0.4490 / $1.1200 | Buy Now |
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DISTI #
MJD122G
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Avnet Americas | Darlington Transistor, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins - Rail/Tube (Alt: MJD122G) COO: Viet Nam RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 11649 |
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$0.4141 / $0.4486 | Buy Now |
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DISTI #
42K1269
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Avnet Americas | Darlington Transistor, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins - Bulk (Alt: 42K1269) COO: Viet Nam RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 544 Partner Stock |
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$0.4710 / $1.1700 | Buy Now |
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Bristol Electronics | Min Qty: 5 | 473 |
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$0.3600 / $1.1250 | Buy Now |
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DISTI #
MJD122G
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TME | Transistor: NPN, bipolar, Darlington, 100V, 8A, 1.75W, DPAK Min Qty: 1 | 61 |
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$0.6260 / $0.9300 | Buy Now |
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ComSIT USA | NPN DARLINGTON POWER TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATION Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
MJD122G
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Avnet Asia | Darlington Transistor, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 1650 Package Multiple: 75 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
MJD122G
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Avnet Silica | Darlington Transistor NPN 100 V 175 W 8 A TO252 DPAK 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 13 Weeks, 0 Days | Silica - 900 |
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Buy Now | |
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Chip Stock | PowerBipolarTransistor,8AI(C),100VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy,2Pin | 3292 |
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RFQ |
US Tariff Estimator: MJD122G by onsemi
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for MJD122G
MJD122G CAD Models
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3D Model
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MJD122G Part Data Attributes
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MJD122G
onsemi
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Datasheet
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Compare Parts:
MJD122G
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | Darlington With Built-In Diode And Resistor | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | Npn | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 4 Mhz |
Alternate Parts for MJD122G
This table gives cross-reference parts and alternative options found for MJD122G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD122T4 | onsemi | Check for Price | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | MJD122G vs MJD122T4 |
| MJD122T4 | Motorola Semiconductor Products | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD122G vs MJD122T4 |
| KSH122 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD122G vs KSH122 |
| KSH122TF | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | MJD122G vs KSH122TF |
| CJD122 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | MJD122G vs CJD122 |
MJD122G Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the MJD122G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating in the saturation region for extended periods.
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To ensure the MJD122G is properly biased for linear operation, it's essential to set the quiescent current (Iq) to the recommended value, typically around 10-20 mA. This can be achieved by adjusting the base resistor (Rb) and emitter resistor (Re) values. Additionally, ensure the collector-emitter voltage (Vce) is within the recommended range, typically around 10-20 V.
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For optimal performance and thermal management, it's recommended to use a multi-layer PCB with a solid ground plane, and to place the MJD122G near a heat sink or thermal pad. Ensure good thermal conductivity between the device and the heat sink, and consider using thermal interface materials (TIMs) if necessary. Follow standard PCB design guidelines for high-power devices, such as using wide traces and minimizing thermal resistance.
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To protect the MJD122G from electrostatic discharge (ESD), follow standard ESD protection guidelines, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD-protective workstations. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to the PCB design.
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Follow standard soldering and assembly guidelines for high-power devices, such as using a controlled soldering iron temperature (around 250°C), and ensuring the device is properly secured to the PCB using a suitable adhesive or mechanical fastening. Avoid overheating the device during soldering, and ensure the PCB is designed to accommodate the device's thermal and mechanical stresses.