Datasheets
MMBD4448HT by:

Rectifier Diode,

Part Details for MMBD4448HT by Galaxy Semi-Conductor Co Ltd

Overview of MMBD4448HT by Galaxy Semi-Conductor Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for MMBD4448HT

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MMBD4448HT Part Data Attributes

MMBD4448HT Galaxy Semi-Conductor Co Ltd
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MMBD4448HT Galaxy Semi-Conductor Co Ltd Rectifier Diode,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 80 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3
Non-rep Pk Forward Current-Max 2 A
Number of Elements 1
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.15 W
Rep Pk Reverse Voltage-Max 85 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 70 V
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL

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