Part Details for MMBT2222AWT1 by Motorola Semiconductor Products
Overview of MMBT2222AWT1 by Motorola Semiconductor Products
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for MMBT2222AWT1
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3000 |
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RFQ | ||
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Quest Components | Bipolar Junction Transistor, NPN Type, SOT-323 | 2674 |
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$0.0234 / $0.0520 | Buy Now |
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Quest Components | Bipolar Junction Transistor, NPN Type, SOT-323 | 2400 |
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$0.1600 / $0.8000 | Buy Now |
Part Details for MMBT2222AWT1
MMBT2222AWT1 CAD Models
MMBT2222AWT1 Part Data Attributes
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MMBT2222AWT1
Motorola Semiconductor Products
Buy Now
Datasheet
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MMBT2222AWT1
Motorola Semiconductor Products
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Collector Current-Max (IC) | 0.6 A | |
Collector-Base Capacitance-Max | 8 pF | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.15 W | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 300 MHz | |
Turn-off Time-Max (toff) | 285 ns | |
Turn-on Time-Max (ton) | 35 ns | |
VCEsat-Max | 1 V |