Datasheets
MMIX1F44N100Q3 by:

Power Field-Effect Transistor, 30A I(D), 1000V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21

Part Details for MMIX1F44N100Q3 by IXYS Corporation

Overview of MMIX1F44N100Q3 by IXYS Corporation

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Applications Computing and Data Storage

Price & Stock for MMIX1F44N100Q3

Part # Distributor Description Stock Price Buy
DISTI # 747-MMIX1F44N100Q3
Mouser Electronics MOSFET HiperFET Pwr MOSFET Q3-Class RoHS: Compliant 0
  • 20 $45.7800
  • 60 $44.2000
  • 100 $42.6200
$42.6200 / $45.7800 Order Now
DISTI # MMIX1F44N100Q3
TME Transistor: N-MOSFET, Q3-Class, unipolar, 1kV, 30A, Idm: 110A, 694W Min Qty: 1 20
  • 1 $60.8500
  • 3 $53.7100
  • 10 $48.2800
  • 20 $45.0800
$45.0800 / $60.8500 Buy Now

Part Details for MMIX1F44N100Q3

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MMIX1F44N100Q3 Part Data Attributes

MMIX1F44N100Q3 IXYS Corporation
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MMIX1F44N100Q3 IXYS Corporation Power Field-Effect Transistor, 30A I(D), 1000V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC PACKAGE-21
Pin Count 21
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 4000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.245 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G21
Number of Elements 1
Number of Terminals 21
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 694 W
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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