Part Details for MMIX1F44N100Q3 by IXYS Corporation
Overview of MMIX1F44N100Q3 by IXYS Corporation
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Applications
Computing and Data Storage
Price & Stock for MMIX1F44N100Q3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-MMIX1F44N100Q3
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Mouser Electronics | MOSFET HiperFET Pwr MOSFET Q3-Class RoHS: Compliant | 0 |
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$42.6200 / $45.7800 | Order Now |
DISTI #
MMIX1F44N100Q3
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TME | Transistor: N-MOSFET, Q3-Class, unipolar, 1kV, 30A, Idm: 110A, 694W Min Qty: 1 | 20 |
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$45.0800 / $60.8500 | Buy Now |
Part Details for MMIX1F44N100Q3
MMIX1F44N100Q3 CAD Models
MMIX1F44N100Q3 Part Data Attributes
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MMIX1F44N100Q3
IXYS Corporation
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Datasheet
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MMIX1F44N100Q3
IXYS Corporation
Power Field-Effect Transistor, 30A I(D), 1000V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC PACKAGE-21 | |
Pin Count | 21 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 4000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.245 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G21 | |
Number of Elements | 1 | |
Number of Terminals | 21 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 694 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |