Datasheets
MMZ1608R150A by: TDK Corporation

Ferrite Chip, 1 Function(s), 1.5A, ROHS COMPLIANT, SMD, 2 PIN

Part Details for: MMZ1608R150A by TDK Corporation

Overview of: MMZ1608R150A by TDK Corporation

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570 Cut Tape
  • 50 $0.0373
  • 100 $0.0327
  • 500 $0.0163

Part Details for: MMZ1608R150A

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Part Data Attributes

MMZ1608R150A TDK Corporation

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MMZ1608R150A TDK Corporation Ferrite Chip, 1 Function(s), 1.5A, ROHS COMPLIANT, SMD, 2 PIN

Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TDK CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8504.50.80.00
DC Resistance-Max 0.05 Ω
Filter Type FERRITE CHIP
Height 0.8 mm
JESD-609 Code e3
Length 1.6 mm
Mounting Type SURFACE MOUNT
Number of Functions 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Output Impedance 15 OHM Ω
Packing Method TAPE AND REEL
Physical Dimension L1.6XB0.8XH0.8 (mm)/L0.063XB0.031XH0.031 (inch)
Rated Current 1.5 A
Terminal Finish MATTE TIN
Width 0.8 mm

Resources and Additional Insights

Reference Designs

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  • PMP10822 十路输出 QR 反激和降压转换器参考设计
    The PMP10822 reference design utilizes two QR flyback, and four buck converters. The efficiency for the 12V and 24V flyback approaches 87%, while the 16V buck converter has efficiency greater than 89%.
  • Ultra-Low Noise Bias Voltage Reference Design for Microbolometer Detectors in Thermal Cameras
    Uncooled microbolometer detectors require accurate and ultra-low noise bias voltages for their operation. Such requirements cannot be simply met by switching power supplies: LDO or DAC outputs. Enabled by Texas Instruments’ precision DAC: low noise precision amplifier and high PSRR: low noise LDO: this reference design demonstrates how to generate accurate and ultra-low noise programmable bias voltages and power supplies for uncooled microbolometer detectors at low cost.
  • 98.6% Efficiency: 6.6-kW Totem-Pole PFC Reference Design for HEV/EV Onboard Charger
    This reference design functions from a base of silicon carbide (SiC) MOSFETs that are driven by a C2000 microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in continuous conduction mode (CCM) to achieve a 98.46% efficiency at a 240-V input voltage and 6.6-kW full power. The C2000 controller enables phase shedding and adaptive dead-time control to improve the power factor at light load. The gate driver board (see TIDA-01605) is capable of delivering a 4-A source and 6-A sink peak current. The gate driver board implements a reinforced isolation and can withstand more than 100-V/ns common-mode transient immunity (CMTI). The gate driver board also contains the two-level turnoff circuit: which protects the MOSFET from voltage overshoot during the short-circuit scenario.

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