Part Details for MRF151G by MACOM
Results Overview of MRF151G by MACOM
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MRF151G Information
MRF151G by MACOM is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MRF151G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Chip Stock | FETRF2CH125V175MHZ375-04/TransRFMOSFETN-CH125V40A5-PinCase375-04 | 425 |
|
RFQ | |
|
|
Vyrian | Transistors | 83 |
|
RFQ | |
|
|
Win Source Electronics | FET RF 2CH 125V 175MHZ 375-04 / Trans RF MOSFET N-CH 125V 40A 5-Pin Case 375-04 | 496 |
|
$109.0909 / $125.8741 | Buy Now |
Part Details for MRF151G
MRF151G CAD Models
MRF151G Part Data Attributes
|
|
MRF151G
MACOM
Buy Now
Datasheet
|
Compare Parts:
MRF151G
MACOM
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
| Package Description | CASE 375-04, 4 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | CASE 375-04 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | MACOM | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 125 V | |
| Drain Current-Max (ID) | 40 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF151G
This table gives cross-reference parts and alternative options found for MRF151G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF151G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MRF151G | Freescale Semiconductor | Check for Price | MRF151G | MRF151G vs MRF151G |
| MRF151G | TE Connectivity | Check for Price | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN | MRF151G vs MRF151G |
| BLF278 | Advanced Semiconductor Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 | MRF151G vs BLF278 |
| BLF278,112 | NXP Semiconductors | Check for Price | BLF278 | MRF151G vs BLF278,112 |
MRF151G Frequently Asked Questions (FAQ)
-
The MRF151G can operate from -40°C to +85°C, but the optimal performance is achieved between 0°C to 50°C.
-
To optimize the PCB layout, keep the input and output traces as short as possible, use a solid ground plane, and avoid vias under the device. Also, ensure that the input and output capacitors are placed close to the device.
-
The recommended input and output matching network for the MRF151G involves using a combination of series and shunt inductors, capacitors, and resistors to achieve optimal impedance matching. The exact values depend on the specific application and frequency range.
-
To bias the MRF151G, apply a voltage of 5-6V to the drain (Vd) and 2.5-3.5V to the gate (Vg) for optimal performance. The exact biasing conditions may vary depending on the specific application and frequency range.
-
The MRF151G can handle up to 10W of continuous power, but the maximum power handling capability depends on the operating frequency, biasing conditions, and cooling arrangements.