Manufacturer | Description | Price Range | Set Alert | Details |
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MACOM | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 368-03, HOGPAC-2 | $760.4800 / $808.1500 |
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Advanced Semiconductor Inc | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | $284.3800 / $315.5000 |
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Motorola Mobility LLC | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 368-03, 2 PIN |
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Motorola Semiconductor Products | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 368-03, 2 PIN |
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TE Connectivity | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 368-03, HOGPAC-2 |
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