Datasheets
MRF24G300H by: NXP Semiconductors

RF Power Bipolar Transistor

Part Details for MRF24G300H by NXP Semiconductors

Overview of MRF24G300H by NXP Semiconductors

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Applications Consumer Electronics Internet of Things (IoT) Smart Cities

Part Details for MRF24G300H

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MRF24G300H Part Data Attributes

MRF24G300H NXP Semiconductors
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MRF24G300H NXP Semiconductors RF Power Bipolar Transistor
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2019-09-23
Case Connection SOURCE
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 150 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 14.9 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM NITRIDE

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