Part Details for MRF24G300H by NXP Semiconductors
Overview of MRF24G300H by NXP Semiconductors
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Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Part Details for MRF24G300H
MRF24G300H CAD Models
MRF24G300H Part Data Attributes
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MRF24G300H
NXP Semiconductors
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Datasheet
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MRF24G300H
NXP Semiconductors
RF Power Bipolar Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Date Of Intro | 2019-09-23 | |
Case Connection | SOURCE | |
Configuration | SEPARATE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 150 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFM-F4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 14.9 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM NITRIDE |