MS2601
Description: RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 4 PIN

Overview of MS2601 by Advanced Power Technology

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation

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Part Data Attributes for MS2601 by Advanced Power Technology

MS2601
Advanced Power Technology
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, S-CDFM-F2
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
BASE
Collector Current-Max (IC)
0.45 A
Configuration
SINGLE
DC Current Gain-Min (hFE)
10
Highest Frequency Band
S BAND
JESD-30 Code
S-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
11.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. MS2601
    Advanced Power Technology
    RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 4 PIN
    VS

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