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Power Field-Effect Transistor, 113A I(D), 1200V, 0.022ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AJ9415
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Newark | Mosfet Sic 1200 V 17 Mohm To-247-4 4 To-247 Tube Rohs Compliant: Yes |Microchip MSC017SMA120B4 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$35.8900 / $44.2200 | Buy Now |
DISTI #
150-MSC017SMA120B4-ND
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DigiKey | MOSFET SIC 1200V 17 MOHM TO-247 Min Qty: 1 Lead time: 4 Weeks Container: Bulk |
21 In Stock |
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$38.4703 / $47.9500 | Buy Now |
DISTI #
MSC017SMA120B4
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Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 119 A, 1.2 kV, 22 Milliohms, TO-247, 4 Pins - Rail/Tube (Alt: MSC017SMA120B4) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 4 Weeks, 0 Days Container: Tube | 0 |
|
$35.8900 / $47.9500 | Buy Now |
DISTI #
579-MSC017SMA120B4
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Mouser Electronics | SiC MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247-4 RoHS: Compliant | 126 |
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$37.4500 / $44.4200 | Buy Now |
DISTI #
MSC017SMA120B4
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Microchip Technology Inc | MOSFET, SIC 1200 V 17 mOhm TO-247-4, Projected EOL: 2049-03-15 RoHS: Compliant pbFree: Yes |
6 Alternates Available |
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$35.8900 / $47.9500 | Buy Now |
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Future Electronics | 1200 V 113A 455W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-4 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 4 Weeks Container: Tube | 0Tube |
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$37.0900 / $37.6800 | Buy Now |
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Future Electronics | 1200 V 113A 455W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks Container: Bulk | 0Bulk |
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$37.0900 / $38.9500 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 24630 Factory Stock |
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$34.7200 / $42.9000 | Buy Now |
DISTI #
MSC017SMA120B4
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 80A, Idm: 280A, 455W Min Qty: 1 | 0 |
|
$40.2000 / $54.3000 | RFQ |
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NAC | MOSFET SIC 1200 V 17 mOhm TO-247-4 RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 30 |
|
$35.0100 / $41.0100 | Buy Now |
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MSC017SMA120B4
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSC017SMA120B4
Microchip Technology Inc
Power Field-Effect Transistor, 113A I(D), 1200V, 0.022ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Microchip | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 113 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 12 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 455 W | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for MSC017SMA120B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC017SMA120B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTH4L020N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L, 450-TUBE | onsemi | MSC017SMA120B4 vs NTH4L020N120SC1 |