Datasheets
MSC017SMA120B4 by: Microchip Technology Inc

Power Field-Effect Transistor, 113A I(D), 1200V, 0.022ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Details for MSC017SMA120B4 by Microchip Technology Inc

Overview of MSC017SMA120B4 by Microchip Technology Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for MSC017SMA120B4

Part # Distributor Description Stock Price Buy
DISTI # 43AJ9415
Newark Mosfet Sic 1200 V 17 Mohm To-247-4 4 To-247 Tube Rohs Compliant: Yes |Microchip MSC017SMA120B4 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $44.2200
  • 100 $38.4700
  • 500 $35.8900
$35.8900 / $44.2200 Buy Now
DISTI # 150-MSC017SMA120B4-ND
DigiKey MOSFET SIC 1200V 17 MOHM TO-247 Min Qty: 1 Lead time: 4 Weeks Container: Bulk 21
In Stock
  • 1 $47.9500
  • 25 $44.2200
  • 100 $38.4703
$38.4703 / $47.9500 Buy Now
DISTI # MSC017SMA120B4
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 119 A, 1.2 kV, 22 Milliohms, TO-247, 4 Pins - Rail/Tube (Alt: MSC017SMA120B4) RoHS: Not Compliant Min Qty: 30 Package Multiple: 30 Lead time: 4 Weeks, 0 Days Container: Tube 0
  • 1 $47.9500
  • 10 $44.2200
  • 100 $38.4700
  • 500 $35.8900
$35.8900 / $47.9500 Buy Now
DISTI # 579-MSC017SMA120B4
Mouser Electronics SiC MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247-4 RoHS: Compliant 126
  • 1 $44.4200
  • 10 $42.9500
  • 30 $38.7000
  • 120 $37.4500
$37.4500 / $44.4200 Buy Now
DISTI # MSC017SMA120B4
Microchip Technology Inc MOSFET, SIC 1200 V 17 mOhm TO-247-4, Projected EOL: 2049-03-15 RoHS: Compliant pbFree: Yes 6

Alternates Available
  • 1 $47.9500
  • 100 $38.4700
  • 500 $35.8900
$35.8900 / $47.9500 Buy Now
Future Electronics 1200 V 113A 455W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-4 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 4 Weeks Container: Tube 0
Tube
  • 30 $37.6800
  • 60 $37.4300
  • 90 $37.2800
  • 120 $37.0900
$37.0900 / $37.6800 Buy Now
Future Electronics 1200 V 113A 455W Through Hole Silicon Carbide N-Channel Power MOSFET-TO-247-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks Container: Bulk 0
Bulk
  • 1 $38.9500
  • 4 $38.4300
  • 15 $37.9300
  • 30 $37.6800
  • 75 $37.0900
$37.0900 / $38.9500 Buy Now
Onlinecomponents.com   RoHS: Compliant 24630 Factory Stock
  • 1 $42.9000
  • 5 $39.3000
  • 10 $38.2300
  • 30 $36.7200
  • 60 $35.7800
  • 120 $35.2400
  • 270 $34.7200
$34.7200 / $42.9000 Buy Now
DISTI # MSC017SMA120B4
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 80A, Idm: 280A, 455W Min Qty: 1 0
  • 1 $54.3000
  • 3 $48.0000
  • 10 $43.1000
  • 30 $40.2000
$40.2000 / $54.3000 RFQ
NAC MOSFET SIC 1200 V 17 mOhm TO-247-4 RoHS: Compliant Min Qty: 1 Package Multiple: 30 30
  • 1 $41.0100
  • 100 $37.7800
  • 500 $35.8900
  • 800 $35.0100
$35.0100 / $41.0100 Buy Now
DISTI # MSC017SMA120B4
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 28
  • 1 $39.4300
  • 50 $38.4100
  • 100 $37.9100
$37.9100 / $39.4300 Buy Now
DISTI # MSC017SMA120B4
Avnet Silica Silicon Carbide MOSFET, Single, N Channel, 119 A, 1.2 kV, 22 Milliohms, TO-247, 4 Pins (Alt: MSC017SMA120B4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MSC017SMA120B4
EBV Elektronik Silicon Carbide MOSFET, Single, N Channel, 119 A, 1.2 kV, 22 Milliohms, TO-247, 4 Pins (Alt: MSC017SMA120B4) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 24630 Factory Stock
  • 1 $42.9000
  • 5 $39.3000
  • 10 $38.2300
  • 30 $36.7200
  • 60 $35.7800
  • 120 $35.2400
  • 270 $34.7200
$34.7200 / $42.9000 Buy Now

Part Details for MSC017SMA120B4

MSC017SMA120B4 CAD Models

MSC017SMA120B4 Part Data Attributes

MSC017SMA120B4 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSC017SMA120B4 Microchip Technology Inc Power Field-Effect Transistor, 113A I(D), 1200V, 0.022ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer Microchip
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 113 A
Drain-source On Resistance-Max 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 455 W
Pulsed Drain Current-Max (IDM) 280 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for MSC017SMA120B4

This table gives cross-reference parts and alternative options found for MSC017SMA120B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC017SMA120B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTH4L020N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L, 450-TUBE onsemi MSC017SMA120B4 vs NTH4L020N120SC1
Part Number Description Manufacturer Compare
NTH4L020N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L, 450-TUBE onsemi MSC017SMA120B4 vs NTH4L020N120SC1

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