Datasheets
MSC080SMA120B by:

Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD

Part Details for: MSC080SMA120B by Microchip Technology Inc

Overview of: MSC080SMA120B by Microchip Technology Inc

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Price & Stock for: MSC080SMA120B

Distributor Stock Package QTY Break / Prices
View MSC080SMA120B on Digi-Key
4 Tube
  • 1 $12.4300
  • 25 $11.4600
  • 100 $11.1600
View MSC080SMA120B on Avnet Americas
0 Tube
  • 1 $12.4300
  • 10 $11.4600
  • 100 $10.0440
  • 500 $9.6720
View MSC080SMA120B on Newark
0 Bulk
  • 1 $13.3500
  • 10 $12.6700
  • 25 $11.7800
  • 50 $10.3300
  • 100 $9.6200
  • 250 $9.3000
View MSC080SMA120B on Newark
0 Bulk
  • 25 $10.9400
  • 50 $10.6300
  • 100 $10.3300
View MSC080SMA120B on Microchip Technology Inc
0
  • 1 $12.4300
  • 100 $9.9700
  • 500 $9.3000
View MSC080SMA120B on TME Electronic Components
10
  • 1 $21.2000
  • 3 $19.1000
  • 10 $17.0000
View MSC080SMA120B on NAC
40 Tube
  • 1 $16.5733
  • 50 $15.2800
  • 100 $13.2900
View MSC080SMA120B on Richardson RFPD
0
  • 40 $10.2200
  • 50 $9.9500
  • 100 $9.8300
View MSC080SMA120B on Avnet Europe
0
  • 1 $27.0698
  • 10 $25.1082
  • 30 $20.6782
  • 50 $18.7635
  • 100 $17.0020
  • 250 $14.9342
  • 500 $14.0152
View MSC080SMA120B on Chip1Cloud
48,267
View MSC080SMA120B on element14 Asia-Pacific
0 Each
  • 1 $13.5626
  • 25 $12.5111
  • 100 $10.8044
View MSC080SMA120B on Farnell
0 Each
  • 1 $14.1313
  • 25 $11.9610

Part Details for: MSC080SMA120B

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Part Data Attributes

MSC080SMA120B Microchip Technology Inc

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MSC080SMA120B Microchip Technology Inc Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD

Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 37 A
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 9 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 91 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for: MSC080SMA120B

This table gives cross-reference parts and alternative options found for MSC080SMA120B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCH2080KE Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCH2080KE
Part Number Description Manufacturer Compare
NTHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi MSC080SMA120B vs NTHL080N120SC1
NVHL080N120SC1 Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi MSC080SMA120B vs NVHL080N120SC1
MSC080SMA120S Transistors Power Field-Effect Transistor, Microsemi Corporation MSC080SMA120B vs MSC080SMA120S
SCH2080KE Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCH2080KE
S2301 Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor MSC080SMA120B vs S2301

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